CTLDM303N-M832DS datasheet, mosfet equivalent, Central Semiconductor

CTLDM303N-M832DS mosfet equivalent, surface mount dual n-channel enhancement-mode silicon mosfet.

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 300.79KB)

Features and benefits

* Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
* High current (ID=3.6A)
* Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continu.

Application

This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. TLM832DS CAS.

Description

The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low t.

Image gallery