CSLLDM22011-225F datasheet, mosfet equivalent, Central Semiconductor

Features and benefits

* High voltage capability
* Low gate charge (Qgs = 4.45nC TYP)
* Ultra low rDS(ON) (0.3Ω TYP)
* TID = 10kRad MAXIMUM RATINGS: (TC=25°C unless otherwise .

Application

This radiation hardened MOSFET combines high voltage capability with ultra low rDS(ON), low threshold voltage, and low g.

Description

The CENTRAL SEMICONDUCTOR CSLLDM22011-225F is an N-Channel MOSFET designed for high voltage, fast switching, low earth orbit applications This radiation hardened MOSFET combines high voltage capability with ultra low rDS(ON), low threshold voltage, .

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