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Central Semiconductor

CQDD-16N Datasheet Preview

CQDD-16N Datasheet

SILICON TRIAC

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CQDD-16M
CQDD-16N
SURFACE MOUNT
16 AMP SILICON TRIACS
600 THRU 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-16M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
D2PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge, t=8.3ms
I2t Value for Fusing, t=8.3ms
SYMBOL
VDRM
IT(RMS)
ITSM
I2t
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current Repetitive, f=60Hz
PGM
PG(AV)
IGM
VGM
di/dt
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
TJ
Tstg
ΘJA
ΘJC
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IDRM
Rated VDRM
IDRM
Rated VDRM, TC=125°C
IGT
VD=12V, RL=10Ω, QUAD I, II, III
IGT
VD=12V, RL=10Ω, QUAD IV
IH
IT=100mA
VGT
VD=12V, RL=10Ω, QUAD I, II, III
VGT
VD=12V, RL=10Ω, QUAD IV
VTM
ITM=22.5A, tp=380μs
dv/dt
VD=2/3 VDRM, RGK=, TC=125°C
10
CQDD-16M
600
CQDD-16N
800
16
110
50
40
1.0
6.0
16
10
-40 to +125
-40 to +150
60
2.3
UNITS
V
A
A
A2s
W
W
A
V
A/μs
°C
°C
°C/W
°C/W
TYP
MAX
UNITS
10
μA
2.0
mA
10.9
25
mA
55.2
75
mA
9.8
25
mA
0.97
1.50
V
1.51
2.50
V
1.35
1.60
V
V/μs
R3 (11-January 2018)




Central Semiconductor

CQDD-16N Datasheet Preview

CQDD-16N Datasheet

SILICON TRIAC

No Preview Available !

CQDD-16M
CQDD-16N
SURFACE MOUNT
16 AMP SILICON TRIACS
600 THRU 800 VOLT
D2PAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) MT1
2) MT2
3) Gate
4) MT2
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R3 (11-January 2018)


Part Number CQDD-16N
Description SILICON TRIAC
Maker Central Semiconductor
PDF Download

CQDD-16N Datasheet PDF






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