CQD-4M
CQD-4N
4.0 AMP TRIAC
600 THRU 800 VOLTS
CentralTM
www.DataSheet4U.com
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQD-4M
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
DPAK THYRISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80°C)
Peak One Cycle Surge (t=10ms)
I2t Value for Fusing (t=10ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Storage Temperature
Junction Temperature
VDRM
IT(RMS)
ITSM
I2t
PGM
PG (AV)
IGM
Tstg
TJ
CQD
-4M
CQD
-4N
600 800
4.0
40
2.4
3.0
0.2
1.2
-40 to +150
-40 to +125
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
IDRM
IGT
IGT
IH
VGT
VTM
dv/dt
Rated VDRM, RGK=1KΩ
Rated VDRM, RGK=1KΩ, TC=125°C
VD=12V, QUAD I, II, III
VD=12V, QUAD IV
RGK=1KΩ
VD=12V, QUAD I, II, III, IV
ITM=6.0A, tp=380µs
VD=2/3 VDRM, TC=125°C
11
TYP
2.5
5.4
1.6
0.95
1.25
MAX
10
200
5.0
9.0
5.0
1.75
1.75
UNITS
V
A
A
A2s
W
W
A
°C
°C
UNITS
µA
µA
mA
mA
mA
V
V
V/µs
R0 (20-May 2004)
