CQ220-8D Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CQ220-8B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge (t=8.3ms) I2t Value for Fusing (t=8.3ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Peak Gate Voltage (tp=10µs) Critical Rate of Rise of On-State Current Repetitive (f=60Hz) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance VDRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM di/dt Tstg TJ ΘJA ΘJC CQ220 -8B 200 CQ220 CQ220 CQ220 -8D -8M -8N 400 600 800 8.0 50 10 40 1.0 4.0 16 10 -40 to +150 -40 to +125 60 3.2 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM Rated VDRM, TC=125°C VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV IT=100m A VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV ITM=11A, tp=380µs VD=2/3 VDRM, RGK=∞, TC=125°C 4.5 17 4.7 0.95 1.35 1.30 MAX 10 500 20 50 25 1.50 2.50 1.75 UNITS V A A A2s W W A V A/µs °C °C °C/W °C/W UNITS µA µA m A m A m A V V V V/µs R2 (24-September 2004) Central TM Semiconductor Corp. CQ220-8B CQ220-8D CQ220-8M CQ220-8N 8.0 AMP TRIAC 200 THRU 800 VOLTS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) GATE NOTE: TAB IS MON TO PIN 2 (MT2) MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F (DIA) G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.170 0.190 4.31 4.82 0.045 0.055 1.15 1.39 0.013 0.026 0.33 0.65 0.083 0.107 2.10 2.72 0.394 0.417 10.01 10.60 0.140 0.157 3.55 4.00 0.100 0.118 2.54 3.00 0.230 0.270 5.85 6.85 0.560 0.625 14.23 15.87 -...