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PROCESS
Smal Signal Transistor
CP792V
PNP - Amp/Switch Transistor Chip
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PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 93,826 PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMPT3906E CMST3906 CXT3906 CZT3906
R0
EPITAXIAL PLANAR 11 x 11 MILS 7.1 MILS 3.7 x 3.7 MILS 3.7 x 3.7 MILS Al - 30,000Å Au - 18,000Å
BACKSIDE COLLECTOR
R2 (13-May 2010)
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PROCESS
CP792V
Typical Electrical Characteristics
R2 (13-May 2010)
w w w. c e n t r a l s e m i .