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CMUDM8001 Datasheet, Central Semiconductor

CMUDM8001 mosfet equivalent, surface mount n-channel enhancement-mode silicon mosfet.

CMUDM8001 Avg. rating / M : 1.0 rating-13

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CMUDM8001 Datasheet

Features and benefits


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* Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary D.

Application

This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: C8A SOT-523 CASE APPLICATIONS:
* Load/Power.

Description

The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Thesho.

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CMUDM8001 Page 1 CMUDM8001 Page 2

TAGS

CMUDM8001
SURFACE
MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON
MOSFET
CMUDM8004
CMUDM7001
CMUDM7004
Central Semiconductor

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