CMLT8099M
DESCRIPTION
: The CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE(ON) characteristics. This PIini™ device is manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. MARKING CODE: 8CM
SOT-563 CASE
- Device is Halogen Free by design
APPLICATIONS:
- Small signal general purpose amplifiers MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
FEATURES
:
- Transistor pair matched for VBE(ON)
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 80 80 6.0 500 350 -65 to +150 357 UNITS V V V m A m W °C °C/W UNITS µA µA V V V V V V
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: SYMBOL TEST CONDITIONS ICBO VCB=80V IEBO VBE=6.0V BVCBO IC=100µA BVCEO IC=10m A BVEBO IE=10µA VCE(SAT) IC=100m A, IB=5.0m A VCE(SAT) IC=100m A, IB=10m A VBE(ON) VCE=5.0V, IC=10m A h FE...
