Datasheet4U Logo Datasheet4U.com

CDMSJ22029-650 - N-CHANNEL SUPER JUNCTION MOSFET

General Description

The CENTRAL SEMICONDUCTOR CDMSJ22029-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers.

Key Features

  • High voltage capability (VDS=650V).
  • Low gate charge (Qgs=11nC).
  • Low rDS(ON) (0.13Ω).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CDM-16214 LCD Pacific Display Devices
CDM-16235 PACIFIC DISPLAY ETC
CDM-20008 SPEAKER CUI
CDM-62256C High Reliability CMOS 32768 x 8-Bit LSI Static RAM Harris Semiconductor
CDM-62256C3 High Reliability CMOS 32768 x 8-Bit LSI Static RAM Harris Semiconductor

Other Datasheets by Central Semiconductor

Part Number Description
CDMSJ22010-650 N-CHANNEL SUPER JUNCTION MOSFET
CDM22010-650 SILICON N-CHANNEL POWER MOSFET
CDM22011-600LRFP N-CHANNEL LR POWER MOSFET
CDM2206-800LR N-CHANNEL LR POWER MOSFET
CDM3-800 N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CDMSJ22029-650 N-CHANNEL SUPER JUNCTION MOSFET 29 AMP, 650 VOLT TO-220FP CASE APPLICATIONS: • Power Factor Correction • TV Power • UPS • PD Charger • Adapter w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDMSJ22029-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low gate charge. MARKING: CDMSJ 29-650 FEATURES: • High voltage capability (VDS=650V) • Low gate charge (Qgs=11nC) • Low rDS(ON) (0.