CDMSJ22010-650 mosfet equivalent, n-channel super junction mosfet.
* High voltage capability (VDS=650V)
* Low gate charge (Qgs=4nC)
* Low rDS(ON) (0.39Ω)
MAXIMUM RATINGS: (TC=25°C) Drain-Source Voltage Gate-Source Voltage C.
* Power Factor Correction
* TV Power
* UPS
* PD Charger
* Adapter
w w w. c e n t r a l s e m i . c.
The CENTRAL SEMICONDUCTOR CDMSJ22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers. This MOSFET combines high voltage capabilit.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 726.32KB)