CDMSJ22010-650 mosfet equivalent, n-channel super junction mosfet.
* High voltage capability (VDS=650V)
* Low gate charge (Qgs=4nC)
* Low rDS(ON) (0.39Ω)
MAXIMUM RATINGS: (TC=25°C) Drain-Source Voltage Gate-Source Voltage C.
* Power Factor Correction
* TV Power
* UPS
* PD Charger
* Adapter
w w w. c e n t r a l s e m i . c.
The CENTRAL SEMICONDUCTOR CDMSJ22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers. This MOSFET combines high voltage capabilit.
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