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Central Semiconductor

CDM7-600LR Datasheet Preview

CDM7-600LR Datasheet

SURFACE MOUNT SILICON N-CHANNEL LR POWER MOSFET

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CDM7-600LR
SURFACE MOUNT SILICON
N-CHANNEL
LR POWER MOSFET
7.0 AMP, 600 VOLT
DPAK CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM7-600LR is a
600 Volt N-Channel MOSFET designed for high voltage,
fast switching applications such as Power Factor
Correction (PFC), lighting and power inverters. This
UltraMOSTM MOSFET combines high voltage capability
with ultra low rDS(ON), low threshold voltage, and low
gate charge for optimal efficiency.
MARKING: FULL PART NUMBER
APPLICATIONS:
Power Factor Correction
Alternative energy inverters
Solid State Lighting (SSL)
FEATURES:
High voltage capability (VDS=600V)
Low gate charge (Qgs=2.62nC TYP)
Ultra low rDS(ON) (0.53Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
Thermal Resistance
ΘJA
Note 1: L=30mH, IAS=3.0A, VDD=100V, RG=25Ω, Initial TJ=25°C
600
30
7.0
28
7.0
28
145
60
-55 to +150
2.08
110
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=30V, VDS=0
IDSS
VDS=600V, VGS=0
0.065
BVDSS
VGS=0, ID=250μA
600
VGS(th)
VGS=VDS, ID=250μA
2.0 3.0
VSD
VGS=0, IS=7.0A
0.89
rDS(ON)
VGS=10V, ID=3.5A
0.53
Crss
VDS=100V, VGS=0, f=1.0MHz
1.94
Ciss VDS=100V, VGS=0, f=1.0MHz
440
Coss
VDS=100V, VGS=0, f=1.0MHz
33
MAX
100
1.0
4.0
1.4
0.58
UNITS
V
V
A
A
A
A
mJ
W
°C
°C/W
°C/W
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R2 (10-August 2015)




Central Semiconductor

CDM7-600LR Datasheet Preview

CDM7-600LR Datasheet

SURFACE MOUNT SILICON N-CHANNEL LR POWER MOSFET

No Preview Available !

CDM7-600LR
SURFACE MOUNT SILICON
N-CHANNEL
LR POWER MOSFET
7.0 AMP, 600 VOLT
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
Qg(tot)
VDS=480V, VGS=10V, ID=7.0A (Note 2)
14.5
Qgs VDS=480V, VGS=10V, ID=7.0A (Note 2)
2.62
Qgd VDS=480V, VGS=10V, ID=7.0A (Note 2)
7.4
td(on)
VDD=300V, VGS=10V, ID=7.0A, RG=24Ω (Note 2)
9.4
tr VDD=300V, VGS=10V, ID=7.0A, RG=24Ω (Note 2) 26
td(off)
VDD=300V, VGS=10V, ID=7.0A, RG=24Ω (Note 2)
44
tf VDD=300V, VGS=10V, ID=7.0A, RG=24Ω (Note 2) 26
trr VGS=0, IS=7.0A, di/dt=100A/μs (Note 2)
283
Qrr VGS=0, IS=7.0A, di/dt=100A/μs (Note 2)
2.73
Note 2: Pulse Width < 300μs, Duty Cycle < 2%
DPAK CASE - MECHANICAL OUTLINE
UNITS
nC
nC
nC
ns
ns
ns
ns
ns
μC
PIN CONFIGURATION
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Gate
2) Drain
3) Source
4) Drain
Pin 2 is common to the tab (4)
MARKING: FULL PART NUMBER
R2 (10-August 2015)


Part Number CDM7-600LR
Description SURFACE MOUNT SILICON N-CHANNEL LR POWER MOSFET
Maker Central Semiconductor
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CDM7-600LR Datasheet PDF






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