Description | The CENTRAL SEMICONDUCTOR BD439, BD440 series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for medium power, low speed switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak... |
Features |
BE(ON)
IC=2.0A, IB=200mA VCE=1.0V, IC=2.0A
hFE VCE=5.0V, IC=10mA (BD439, BD440) hFE VCE=5.0V, IC=10mA (BD441, BD442)
hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=2.0A (BD439, BD440)
hFE VCE=1.0V, IC=2.0A (BD441, BD442) fT VCE=1.0V, IC=250mA
MIN
60 80
20 15 40 25 15 3.0
MAX 100 100 1.0
0.8 1.5
UNITS V V V V A A A W °C
°C/W °C/W
UNITS μA μA mA V V ...
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Datasheet | BD439 Datasheet - 115.57KB |