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Central Semiconductor

BC212 Datasheet Preview

BC212 Datasheet

SILICON PNP TRANSISTORS

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BC212
BC212A
BC212B
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC212 series are
silicon PNP transistors designed for low noise, high
gain amplifier applications.
TO-92 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
60
50
5.0
200
300
-65 to +150
416
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=30V
IEBO
VEB=4.0V
BVCBO
IC=10μA
60
BVCEO
IC=2.0mA
50
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=500μA
VCE(SAT) IC=100mA, IB=5.0mA
VBE(SAT) IC=100mA, IB=5.0mA
VBE(ON)
VCE=5.0V, IC=2.0mA
0.60
hFE VCE=5.0V, IC=2.0mA (BC212) 60
hFE
VCE=5.0V, IC=2.0mA (BC212A)
100
hFE
VCE=5.0V, IC=2.0mA (BC212B)
200
fT
VCE=5.0V, IC=10mA, f=100MHz
200
Cob VCB=10V, IC=0, f=1.0MHz
NF VCE=5.0V, IC=200μA,
f=1.0kHz, RS=2.0kΩ
MAX
15
15
0.25
0.60
1.4
0.72
400
300
400
6.0
10
UNITS
V
V
V
mA
mW
°C
°C\W
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
dB
R1 (19-May 2017)




Central Semiconductor

BC212 Datasheet Preview

BC212 Datasheet

SILICON PNP TRANSISTORS

No Preview Available !

BC212
BC212A
BC212B
SILICON
PNP TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Collector
2) Base
3) Emitter
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (19-May 2017)



Part Number BC212
Description SILICON PNP TRANSISTORS
Maker Central Semiconductor
Total Page 3 Pages
PDF Download

BC212 Datasheet PDF





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