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2N6316 Datasheet COMPLEMENTARY SILICON POWER TRANSISTORS

Manufacturer: Central Semiconductor

Download the 2N6316 datasheet PDF. This datasheet also includes the 2N6315 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2N6315-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

: The CENTRAL SEMICONDUCTOR 2N6315 series devices are complementary silicon power transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications.

TO-66 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6315 2N6317 60 2N6316 2N6318 80 60 80 5.0 7.0 15 2.0 90 -65 to +200 1.95 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C ICEO VCE=1/2 Rated VCEO IEBO VEB=5.0V BVCEO

Overview

2N6315 2N6316 NPN 2N6317 2N6318 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w.

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