2N6301 Datasheet | Central Semiconductor

2N6298 2N6299 PNP 2N6300 2N6301 NPN PLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are plementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 2N6299 2N6301 60 80 -65 to +200 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=100m A (2N6298, 2N6300) BVCEO IC=100m A (2N6299, 2N6301) VCE(SAT) IC=4.0A, IB=16m A VCE(SAT) IC=8.0A, IB=80m A VBE(SAT) IC=8.0A, IB=80m A VBE(ON) VCE=3.0V, IC=4.0A h FE VCE=3.0V,...