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2N6298 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications.

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2N6298 2N6299 PNP 2N6300 2N6301 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 60 2N6299 2N6301 80 60 80 5.0 8.0 16 120 75 -65 to +200 2.
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