2N6041 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are plementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6040 2N6043 2N6041 2N6044 80 80 5.0 8.0 16 120 75 -65 to +150 1.67 2N6042 2N6045 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO ICEV ICEV ICEO IEBO BVCEO BVCEO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) h FE h FE h FE VCB=Rated VCBO VCE=Rated VCEO, VBE(OFF)=1.5V VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C VCE=Rated VCEO VEB=5.0V IC=100m A (2N6040, 2N6043) IC=100m A (2N6041, 2N6044) IC=100m A (2N6042, 2N6045) IC=4.0A, IB=16m A (2N6040, 2N6041, 2N6043, 2N6044) IC=3.0A, IB=12m A (2N6042, 2N6045) IC=8.0A, IB=80m A IC=8.0A, IB=80m A VCE=4.0V, IC=4.0A VCE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044) VCE=4.0V, IC=3.0A (2N6042, 2N6045) VCE=4.0V, IC=8.0A 60 80 100 1,000 1,000 100 MAX 20 20 200 20 2.0 2.0 2.0 4.0 4.5 2.8 20,000 20,000 UNITS V V V A A m A W °C °C/W UNITS µA µA µA µA m A V V V V V V V V R1 (16-November 2009) 2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN PLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hfe VCE=4.0V, IC=3.0A, f=1.0k Hz 300 f T VCE=4.0V, IC=3.0A, f=1.0MHz Cob VCB=10V, IE=0, f=100k Hz (NPN Types) Cob VCB=10V, IE=0, f=100k Hz (PNP Types) 200 300 TO-220...