2N6035 Datasheet | Central Semiconductor

2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN PLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are plementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 40 60 80 40 60 80 5.0 4.0 8.0 100 40 1.5 -65 to +150 83.3 3.12 UNITS V V V A A m A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST...