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2N5460 2N5461 2N5462
SILICON P-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m
The CENTRAL SEMICONDUCTOR 2N5460, 2N5461, and 2N5462 are silicon P-Channel JFETs designed for low level amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Reverse Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature
SYMBOL VDG VGSR IG PD
TJ, Tstg
40 40 10 310 -65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5460
2N5461
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
IGSS
VGS=20V
-
5.0
-
5.0
IGSS
VGS=20V, TA=100°C
-
1.0
-
1.0
IDSS
VDS=15V, f=1.0kHz
1.0 5.0
2.0 9.0
BVGSS
IG=10μA
40
-
40
-
VGS
VDS=15V, ID=0.1mA
0.5 4.0
-
-
VGS
VDS=15V, ID=0.