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2N5461 - SILICON P-CHANNEL JFETS

Download the 2N5461 datasheet PDF (2N5460 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon p-channel jfets.

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Note: The manufacturer provides a single datasheet file (2N5460-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Central Semiconductor
  • 2N5460 - SILICON P-CHANNEL JFETS
  • 2N5462 - SILICON P-CHANNEL JFETS
  • 2N5400 - SILICON PNP TRANSISTOR
  • 2N5401 - SILICON PNP TRANSISTOR
  • 2N5415 - SILICON PNP TRANSISTORS
  • 2N5416 - SILICON PNP TRANSISTORS
  • 2N5484 - SILICON N-CHANNEL JFET
  • 2N5485 - SILICON N-CHANNEL JFET

Full PDF Text Transcription

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2N5460 2N5461 2N5462 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N5460, 2N5461, and 2N5462 are silicon P-Channel JFETs designed for low level amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Reverse Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDG VGSR IG PD TJ, Tstg 40 40 10 310 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5460 2N5461 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 5.0 - 5.0 IGSS VGS=20V, TA=100°C - 1.0 - 1.0 IDSS VDS=15V, f=1.0kHz 1.0 5.0 2.0 9.0 BVGSS IG=10μA 40 - 40 - VGS VDS=15V, ID=0.1mA 0.5 4.0 - - VGS VDS=15V, ID=0.
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