2N4231A Datasheet | Central Semiconductor

2N4231A 2N4232A 2N4233A NPN 2N6312 2N6313 2N6314 PNP PLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are plementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 2N4231A 2N4232A 2N4233A SYMBOL 2N6312 2N6313 2N6314 VCBO VCEO VEBO IC 5.0 ICM 10 IB 2.0 PD 75 TJ, Tstg -65 to +200 JC UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO VCB=Rated VCBO ICEO VCE=30V (2N4231A, 2N6312) ICEO VCE=50V (2N4232A, 2N6313) ICEO VCE=70V (2N4233A,...