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2N3020 - NPN Transistor

Download the 2N3020 datasheet PDF. This datasheet also covers the 2N3019 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications.

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Note: The manufacturer provides a single datasheet file (2N3019-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 140 80 7.0 1.0 0.8 5.0 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3019 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V - 10 ICBO VCB=90V, TA=150°C - 10 IEBO VEB=5.0V - 10 BVCBO IC=100μA 140 - BVCEO IC=30mA 80 - BVEBO IE=100μA 7.
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