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2N2646 2N2647
SILICON PN UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications.
MARKING: FULL PART NUMBER
TO-18 (UJT) CASE
MAXIMUM RATINGS: (TA=25°C) Emitter Reverse Voltage
SYMBOL VB2E
Interbase Voltage
VB2B1
RMS Emitter Current
Ie
Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps) ie
RMS Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
30 35 50 2.0 300 -65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2646
SYMBOL TEST CONDITIONS
MIN MAX
VB2B1=10V
0.56 0.75
RBB
VB2B1=3.0V
4.7 9.1
IEB2O
VB2E=30V
- 12
IV VB2B1=20V, RB2=100Ω
4.0 -
IP VB2B1=25V
- 5.
2N2646 Datasheet
