CC5100K Datasheet | California Micro Devices

features high Q and a low positive TCC over a wide temperature range. Each format has a defined bonding area. Operating Temperature Range D .C. Working Voltage @ 25°C Peak Voltage @ 25°C D issipation Factor @ 1khz, 1V, 25°C Q @ 1 Mhz, 50 m V, 25°C .. Temperature Coefficient of Capacitance (TCC), -55°+150°C ELECTRICAL SPECIFICATIONS Parameter -55°C to +125° As spe ci fi e d i n C / V t a b l e 1.5 X Working Voltage 0.1% max 1000 min ±50p p m / ° C Test Condition Substrate Backing Metalization MECHANICAL SPECIFICATIONS Silicon 10±2 mils thick Go l d Aluminum 10,000Å thick, min Formats BONDING PADS — 5 mils2 Bonding Area Two inch square trays of 400 chips maximum. PACKAGING FORMAT A 20 x 20 mils FORMAT B 30 x 30 mils FORMAT C 40 x 40 mils FORMAT D 55 x 55 mils Picofarads 4.7 5.6 6.8 10 12 15 51 56 62 CAPACITANCE AND VOLTAGE RATING Volts Picofarads Volts Picofarads Volts Picofarads 20 x 20-mils FORMAT A 40 X 40-MILS FORMATS C 200 200 150 10 0 10 0 80 80 80 70 18 22 27 33 39 47 70 50 50 40 30 30 12 0 150 18 0 220 70 60 50 40 270 330 390 Volts 30 30 30 30 x 30-mils FORMAT B 68 75 82 10 0 70 60 50 50 47 0 56 0 680 55 x 55-MILS FORMATS D 40 30 30 820 10 0 0 25 25 Series Significant figures of capacitance. R indicates decimal point. PART NUMBE R DE SIGNATION 0 Number of Zeroes added to signifiicant figures Tolerance J = ±5% ≥ 50p F K = ±10% ≥ 50p F M + ±20% ≥ 50PF C0710300 © 2000 California Micro Devices Corp. All rights reserved. 3/00 215 Topaz Street, Milpitas, California...