NX5330SA diode equivalent, laser diode.
* High output power
* Long wavelength PO = 350 mW @ IFP = 1 000 mA*1
*C = 1 310 nm
*1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1%
Document No. PL1.
DESCRIPTION
The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectomet.
The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectometer (OTDR). This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain
FEATURES
* High.
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