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NESG250134 Datasheet, California Eastern Labs

NESG250134 transistor equivalent, necs npn sige rf transistor.

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NESG250134 Datasheet

Features and benefits


* THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pi.

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TAGS

NESG250134
NECs
NPN
SiGe
TRANSISTOR
NESG2021M05
NESG2021M16
NESG2030M04
California Eastern Labs

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