MTNK2N3 Datasheet | CYStech Electronics

Description The MTNK2N3 is a N-channel enhancement-mode MOSFET. Features - Low on-resistance - High ESD - High speed switching - Low-voltage drive(4V) - Easily designed drive circuits - Easy to use in parallel - Pb-free package Symbol MTNK2N3 D Outline SOT-23 D G：Gate S S：Source D：Drain Ordering Information Device MTNK2N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 702- CYStek Product Specification http://.. CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current - 1, 2 Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2011.12.13 Page No. : 2/7 Symbol VDSS VGSS ID IDM PD Rth,j-a TJ Tstg TA=25°C@VGS=10V TA=70°C@VGS=10V Total Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient ESD susceptibility Operating Junction Temperature Range Storage Temperature Range Limits 60 ±20 640 500 950 1.38 0.01 90 1000 -55~+150 -55~+150 - 1 - 2 - 2 - 3 Unit V V m A m A m A W W/°C °C/W V °C °C Note : - 1. Pulse Width ≤ 300μs, Duty cycle ≤2% - 2. When the device is mounted on 1in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad. - 3. Human body model, 1.5kΩ in series with 100p F Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS- 60 BVDSS/ΔTj 0.05 VGS(th) 1 2.5 IGSS ±10 1 IDSS 100 1.6 2 RDS(ON)- 1.23 5 1.26 4 VSD 1.2 GFS 600 Ciss 62 80 Coss 17.6 Crss 9 Qg 1 Qgs 0.5 Qgd 0.5 td(on) 12 tr 10 td(off) 56 tf 29 - Unit V V/℃ V μA μA Ω V m S p...