TIP31CJ3 Datasheet - CYStech

TIP31CJ3 3A NPN Epitaxial Planar Power Transistor

TIP31CJ3 Features

* Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A

* High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min)

* High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA

* Pb-free lead plating and halogen-free package Symbol T

Datasheet Details

TIP31CJ3

CYStech

274.13 KB

3a npn epitaxial planar power transistor.

📁 Related Datasheet

TIP31C Power Transistors (RECTRON)

TIP31C NPN TRANSISTORS (CDIL)

TIP31C Silicon NPN Transistors (NTE)

TIP31C POWER TRANSISTORS (Motorola)

TIP31C Epitaxial Planar NPN Transistor (GME)

TIP31C Power transistor (STMicroelectronics)

TIP31C Silicon NPN Power Transistors (SavantIC)

TIP31C NPN EXPITAXIAL PLANAR TRANSISTOR (UTC)

TAGS

TIP31CJ3 NPN Epitaxial Planar Power Transistor CYStech

TIP31CJ3 Distributor