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MTN2302V3 - N-Channel Enhancement Mode MOSFET

Features

  • VDS=20V RDS(ON)=85mΩ(max. )@VGS=4.5V, IDS=3.6A RDS(ON)=115mΩ(max. )@VGS=2.5V, IDS=3.1A.
  • Simple drive requirement.
  • Small package outline.
  • Capable of 2.5V gate drive.
  • Pb-free package Symbol MTN2302V3 Outline TSOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Cur.

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Datasheet Details

Part number MTN2302V3
Manufacturer CYStech
File Size 338.67 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2302V3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : 2010.06.18 Page No. : 1/9 Features • VDS=20V RDS(ON)=85mΩ(max.)@VGS=4.5V, IDS=3.6A RDS(ON)=115mΩ(max.)@VGS=2.5V, IDS=3.1A • Simple drive requirement • Small package outline • Capable of 2.5V gate drive • Pb-free package Symbol MTN2302V3 Outline TSOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Limits 20 ±8 3.
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