MTDN8233X6 mosfet equivalent, dual n-channel enhancement mode power mosfet.
* Simple drive requirement
* Low gate charge
* Low on-resistance
* Fast switching speed
* ESD protected
* Pb-free lead plating and halogen-free pa.
Features
* Simple drive requirement
* Low gate charge
* Low on-resistance
* Fast switching speed
*.
The MTDN8233X6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×3-6L
package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TDFN2×3-6L p.
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