MTDN5820Z6 mosfet equivalent, dual n-channel enhancement mode power mosfet.
* Simple drive requirement
* Low gate charge
* Low on-resistance
* Fast switching speed
* ESD protected
* Pb-free lead plating and halogen-free pa.
Features
* Simple drive requirement
* Low gate charge
* Low on-resistance
* Fast switching speed
*.
VGS=2.5V, ID=5.5A
7.8 mΩ
The MTDN5820Z6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×5-6L
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-e.
Image gallery
TAGS
Download