• Part: MTB020N10RE3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech
  • Size: 625.05 KB
Download MTB020N10RE3 Datasheet PDF
CYStech
MTB020N10RE3
MTB020N10RE3 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Ro HS pliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A 100V 33A 6.6A 21.3mΩ(typ) 26.5 mΩ(typ) Symbol Outline TO-220 G:Gate D:Drain S:Source Ordering Information Device Package Shipping MTB020N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C053E3 Issued Date : 2019.08.29 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V (Note 1) Continuous Drain Current @TC=100C, VGS=10V (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 2) Continuous Drain Current @TA=70C, VGS=10V (Note...