Datasheet4U Logo Datasheet4U.com

MTB020N10RE3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A 100V 33A 6.6A 21.3mΩ(typ) 26.5 mΩ(typ) Symbol MTB020N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB020N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton.

📥 Download Datasheet

Datasheet preview – MTB020N10RE3

Datasheet Details

Part number MTB020N10RE3
Manufacturer CYStech
File Size 625.05 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020N10RE3 Datasheet
Additional preview pages of the MTB020N10RE3 datasheet.

📁 Similar Datasheet

  • MTB020N03E3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB020N03KJ3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB020N03KL3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB020N03KM3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB020N03KN3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB020N03KN6 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB020N03KQ8 - N-Channel Enhancement Mode MOSFET (Cystech Electonics)
  • MTB020N03KV8 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB020N06KH8 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB020A03KV8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
Other Datasheets by CYStech

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. Spec. No. : C053E3 Issued Date : 2019.08.29 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB020N10RE3 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A 100V 33A 6.6A 21.3mΩ(typ) 26.
Published: |