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MTB020N06KE3

The MTB020N06KE3 is N-Channel Enhancement Mode Power MOSFET designed by CYStech.

Product Overview

CYStech

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MTB020N06KE3 N-Channel Enhancement Mode Power MOSFET by CYStech - Datasheet Preview — Datasheet preview – MTB020N06KE3

Datasheet Details

Part number	MTB020N06KE3
Manufacturer	CYStech
File Size	396.59 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB020N06KE3-CYStech.pdf
Additional preview pages of the MTB020N06KE3 datasheet.

Product details

Features

RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A.
Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD protected gate.
RoHS compliant package 60V 41A 8.4A 12.7 mΩ(typ) 17.8 mΩ(typ) Symbol MTB020N06KE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB020N6KE3-0-UB-X Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment.

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Published: Mar 6, 2020 |