BTD1805F3 transistor equivalent, low vcesat npn epitaxial planar transistor.
* Very low collector-to-emitter saturation voltage
* Fast switching speed
* High current gain characteristic
* Large current capability
* RoHS complia.
* CCFL drivers
* Voltage regulators
* Relay drivers
* High efficiency low voltage switching applications.
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
* Very low collector-to-emitter saturation vo.
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