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CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
BTB9050N3
Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : Page No. : 1/7
Description
• High breakdown voltage. (BVCEO=-500V) • Low saturation voltage, typical VCE(sat) =-0.13V at Ic/IB =-20mA/-2mA. • Complementary to BTNA45N3 • Pb-free package
Symbol
BTB9050N3
Outline
SOT-23 C
B:Base C:Collector E:Emitter
BE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation
Thermal Resistance, Junction-to-Ambient
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PD
Rth,ja
Tj Tstg
Note : Device mounted on a FR-4 board with minimum pad size.