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BTB1424A3 - PNP Transistor

Key Features

  • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTD2150A3.
  • Pb-free package Symbol BTB1424A3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%. Symbol VCBO VCEO VEBO IC(D.

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Datasheet Details

Part number BTB1424A3
Manufacturer CYStech
File Size 186.25 KB
Description PNP Transistor
Datasheet download datasheet BTB1424A3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Spec. No. : C817A3-R Issued Date : 2006.05.30 Revised Date:2008.04.24 Page:1/5 Features • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD2150A3 • Pb-free package Symbol BTB1424A3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%.