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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1386M3
Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2014.05.20 Page No. : 1/6
Features
• Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics • Complementary to BTD2098M3 • Pb-free lead plating and halogen-free package
Symbol
BTB1386M3
Outline
SOT-89
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range Note : 1. Single Pulse Pw=10ms
2. When mounted on a 40 ×40 ×0.7 mm ceramic board.
BTB1386M3 Datasheet
