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CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
BTB1236AFP
Spec. No. : C854FP Issued Date : 2011.09.13 Revised Date : Page No. : 1/5
Description
• High BVCEO • High current capability • RoHS compliant package
Symbol
BTB1236AFP
Outline
TO-220FP
B:Base C:Collector E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
TA=25°C TC=25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature and Storage Temperature Range
Note : 1. Single Pulse Pw≦350μs, Duty≦2%.
Symbol
VCBO VCEO VEBO
IC ICP
PD
RθJA RθJC
Tj ; Tstg
Limits
-180 -160
-5 -1.5 -3 (Note 1)
2 20
62.5 6.