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BTB1188M3R - PNP Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A.
  • Excellent current gain characteristics.
  • Complementary to BTD1766M3.
  • Pb-free lead plating and halogen-free package Symbol BTB1188M3R Outline SOT-89 B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation VCBO VCEO VEBO IC.

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Datasheet Details

Part number BTB1188M3R
Manufacturer CYStech
File Size 211.32 KB
Description PNP Transistor
Datasheet download datasheet BTB1188M3R Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C623M3 Issued Date : 2003.05.25 Revised Date : 2013.08.12 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB1188M3R BVCEO IC RCESAT(typ) -30V -2A 0.22Ω Features • Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.