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BTB1188AM3 - PNP Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A.
  • Excellent current gain characteristics.
  • Complementary to BTD1766AM3.
  • Pb-free lead plating package Symbol BTB1188AM3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Power Dissipation ESD susceptibility Operati.

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Datasheet Details

Part number BTB1188AM3
Manufacturer CYStech
File Size 210.80 KB
Description PNP Transistor
Datasheet download datasheet BTB1188AM3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C812M3-A Issued Date : 2011.02.17 Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB1188AM3 BVCEO IC RCESAT(typ) -40V -2A 0.22Ω Features • Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A • Excellent current gain characteristics • Complementary to BTD1766AM3 • Pb-free lead plating package Symbol BTB1188AM3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj ; Tstg Limits -50 -40 -6 -2 -4 (Note 1) 0.