BTA3513I3 - PNP Transistor

CYStech

Key Features

Low VCE(sat).
High BVCEO.
Excellent current gain characteristics.
RoHS compliant package BVCEO IC RCESAT Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 1/9 -80V -10A 75mΩ typ. Symbol BTA3513I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipa.

BTA3513I3 pnp transistor by CYStech - Datasheet Preview

Datasheet Details

Part number	BTA3513I3
Manufacturer	CYStech
File Size	207.17 KB
Description	PNP Transistor
Datasheet	BTA3513I3 Datasheet

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA3513I3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package BVCEO IC RCESAT Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 1/9 -80V -10A 75mΩ typ. Symbol BTA3513I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Note : 1.