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BTA1640T3 - PNP Epitaxial Planar Power Transistor

Key Features

  • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A.
  • Excellent current gain linearity.
  • RoHS compliant package. Symbol BTA1640T3 Outline TO-126 B：Base C：Collector E：Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambie.

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Datasheet Details

Part number BTA1640T3
Manufacturer CYStech
File Size 244.08 KB
Description PNP Epitaxial Planar Power Transistor
Datasheet download datasheet BTA1640T3 Datasheet

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CYStech Electronics Corp. PNP Epitaxial Planar Power Transistor BTA1640T3 BVCEO IC RCESAT Spec. No. : C657T3 Issued Date : 2011.02.23 Revised Date :2016.12.09 Page No. : 1/5 -50V -7A 70mΩ(typ.) Features • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A. • Excellent current gain linearity. • RoHS compliant package. Symbol BTA1640T3 Outline TO-126 B：Base C：Collector E：Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1.