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BTA1640F3 - PNP Epitaxial Planar Power Transistor

Key Features

  • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A.
  • Excellent current gain linearity.
  • Pb-free lead plating package Symbol BTA1640F3 Outline TO-263 B:Base C:Collector E:Emitter BCE Ordering Information Device BTA1640F3-0-T7-X Package Shipping TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound produ.

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Datasheet Details

Part number BTA1640F3
Manufacturer CYStech
File Size 257.90 KB
Description PNP Epitaxial Planar Power Transistor
Datasheet download datasheet BTA1640F3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C657F3 Issued Date : 2010.09.21 Revised Date : 2017.01.20 Page No. : 1/7 PNP Epitaxial Planar Power Transistor BTA1640F3 BVCEO -30V IC -7A VCE(SAT) -0.4V(max) Features • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.