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BSS84S6R - Dual P-Channel MOSFET

Key Features

  • Low on-resistance.
  • High ESD capability.
  • High speed switching.
  • Low-voltage drive(-2.5V).
  • Pb-free package BVDSS ID RDSON@VGS=-10V, ID=-100mA RDSON@VGS=-5V, ID=-100mA RDSON@VGS=-3V, ID=-30mA -50V -170mA 5Ω (typ) 6Ω (typ) 8Ω (typ) Equivalent Circuit BSS84S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curr.

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Datasheet Details

Part number BSS84S6R
Manufacturer CYStech
File Size 256.59 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet BSS84S6R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C465S6R Issued Date : 2012.12.25 Revised Date : Page No. : 1/ 8 Dual P-Channel MOSFET BSS84S6R Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(-2.