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BSS123KN3 - N-Channel Enhancement Mode MOSFET

Key Features

  • High ESD.
  • High speed switching.
  • Pb-free lead plating and halogen-free package.
  • Easily designed drive circuits.
  • Low-voltage drive.
  • Easy to use in parallel Symbol BSS123KN3 D G G:Gate S S:Source D:Drain Outline SOT-23 D S G Ordering Information Device BSS123KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS com.

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Datasheet Details

Part number BSS123KN3
Manufacturer CYStech
File Size 400.62 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet BSS123KN3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : 2016.12.07 Page No. : 1/9 N-Channel Enhancement Mode MOSFET BSS123KN3 BVDSS ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=120mA RDS(ON)@VGS=4.5V, ID=100mA 100V 0.26A 2.13Ω(typ) 2.