3429DE mosfet equivalent, dual p-channel mosfet.
* VDS
* ID
* RDS(ON)( at VGS=-4.5V)
* RDS(ON)( at VGS=-2.5V)
* RDS(ON)( at VGS=-1.8V)
-20V -30A <19 mohm <26 mohm <45 mohm
* Trench Power LV MO.
GENERAL FEATURES
* VDS
* ID
* RDS(ON)( at VGS=-4.5V)
* RDS(ON)( at VGS=-2.5V)
* RDS(ON)( at VGS=-.
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS
* ID
* RDS(ON)( at VGS=-4.5V)
* RDS(ON)( at VGS=-.
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