SR1020 thru SR10150
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage – 20 to 150 Volts
Forward Current – 10 Amperes
®
Features
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
• Metal of silicon rectifier, majority carrier conduction
• Guard ring for transient protection
• High capability
• Low power loss, high efficiency
• High current capability, low forward voltage
• High surge capacity
• For use in low voltage, high frequency inverters free
wheeling, and polarity protection applications
Mechanical Data
• Case: Molded plastic body, TO-220AB
• Terminals: Axial leads, solderable per MIL-STD-202, method 208
• Polarity: As marked
• Mounting Position: Any
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.025(0.65)MAX
.1(2.54)
Positive CT
AC
AC
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SR SR SR SR SR SR SR SR Units
1020 1030 1040 1050 1060 1090 10100 10150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
VRRM
VRMS
VDC
I(AV)
20 30 40 50 60 90 100 150
14 21 28 35 42 63 70 105
20 30 40 50 60 90 100 150
10.0
V
V
V
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
120 A
Maximum Instantaneous Forward Voltage
@5.0A
VF
0.55 0.70 0.85 0.95 V
Maximum D.C. Reverse Current @ Tc=25 oC
at Rated DC Blocking Voltage
@ Tc=100 oC
IR
0.5
15
10
0.1 mA
5.0 mA
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Cj
RθJC
TJ
TSTG
-65 to +125
310
3.0
-65 to +150
-65 to +150
pF
oC/W
oC
oC
Notes:
1. Thermal Resistance from Junction to Case Per Leg, Mounted on Heatsink size of
2” x 3” x 0.25” Al-Plate.
2. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.
MAR-14,2006,REV.3
CUMSUMI SEMICONDUCTOR INTERNATIONAL
® www.cumsumi.com
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