CTLM17NS10-R3 datasheet, mosfet equivalent, CT Micro

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Features and benefits

* Drain-Source Breakdown Voltage VDSS 100 V
* Drain-Source On-Resistance RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA ℃
* Continuous .

Application

* Power Management
* LCD Display inverter
* DC/DC Converter
* Load Switch Package Outline Schematic Dr.

Description

The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications

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