CTL550NS08-T52 Datasheet, CT Micro

* Drain-Source Breakdown Voltage VDSS 80V
* Drain-Source On-Resistance RDS(ON) 11m, at VGS= 10V, ID= 40A
* Continuous Drain Current at TC=25℃ID =55A
* Ad.

* DC/DC Converter
* Load Switch
* Power Management Package Outline Schematic Drain Gate Source Drain G.

The CTL550NS08-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.

CTL505NS10-T52

CTL5100MASG

CTL5702

CTL-10-S50-30F-CL

CTL-12-S30-2.5Z

CTL-12-S36-10

CTL-12-S36-10L1

CTL-12-S56-10

CTL-12-S56-10L

CTL-12-S56-20

CTL-12L-10

CTL-12L-30

CTL-12S