* Drain-Source Breakdown Voltage VDSS 100V
* Drain-Source On-Resistance RDS(ON) 65m, at VGS= 10V, ID= 12A RDS(ON) 75m, at VGS= 5V, ID= 12A
* Continuous Drai.

* DC/DC Converter
* Load Switch
* LCD Display inverter Package Outline Schematic Drain Gate Source Dra.

The CTL190NS10-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.

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